Liquid Phase Epitaxial Growth of GaxIn1-xSb by Vertical Dipping Method
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/16/i=9/a=1605/pdf
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The influence of temperature gradient and lowering speed on the melt–solid interface shape of GaxIn1−xSb alloy crystals grown by vertical Bridgman technique;Journal of Crystal Growth;1999-06
2. Rapid diffusion of Ga into InSb and precipitation of In;Journal of Crystal Growth;1996-06
3. LPE Growth of Ga1 –xInxSb Multi-grading Layers;Crystal Research and Technology;1992
4. Molecular beam epitaxy of GaSb and InGaSb;Journal of Crystal Growth;1985-12
5. Ternary AIII Bv antimonides;Progress in Crystal Growth and Characterization;1984-01
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