LPE Growth of Ga1 –xInxSb Multi-grading Layers-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

LPE Growth of Ga1 –xInxSb Multi-grading Layers

Published:1992 Issue:5 Volume:27 Page:609-616
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Xiuying Gong,Okitsu Kazuhiko,Ozawa Tetsuo,Hawakawa Yasuhiro,Yamaguchi Tomou,Kumagawa Masashi

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference10 articles.

1. Growth of GaxIn1-xSb liquid phase epitaxial layers from a knowledge of the ternary phase diagram

2. Three-level oscillator: a new form of transferred-electron device

3. Growth of Ga1−xAlxSb and Ga1−xInxSb by organometallic chemical vapor deposition

4. Liquid Phase Epitaxial Growth of GaxIn1-xSb by Vertical Dipping Method

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of Ga x In1 − x Sb solid solution single crystals by the Czochralski method;Crystallography Reports;2009-07

2. Axially linear slopes of composition for “delta” crystals;Journal of Crystal Growth;1994-05

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3