Photovoltaic Properties ofn-type β-FeSi2/p-type Si Heterojunctions
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference9 articles.
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1. Temperature dependency of impedance, dielectric, and conductivity properties for Si-p/beta-FeSi2-n heterostructures created through facing target sputtering;Materials Science in Semiconductor Processing;2024-08
2. Impedance characteristics under different voltages of n-β-FeSi2/p-Si heterojunctions constructed via facing target sputtering;Materials Science in Semiconductor Processing;2023-10
3. Comprehensive electrical characterization and theoretical analysis of Mn and As doped β-FeSi2 through DFT: A promise to rectification and photovoltaic applications;Journal of Applied Physics;2023-07-11
4. Numerical analysis of FeSi2 based solar cell with PEDOT:PSS hole transport layer;Materials Today Communications;2023-03
5. A simple chemical reduction approach to dope β-FeSi2 with boron and its comprehensive characterization;RSC Advances;2023
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