A simple chemical reduction approach to dope β-FeSi<sub>2</sub> with boron and its comprehensive characterization-Reference-Cited by-同舟云学术

A simple chemical reduction approach to dope β-FeSi₂ with boron and its comprehensive characterization

Published:2023 Issue:19 Volume:13 Page:12825-12843
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Sen Sabyasachi¹,Acharya Debdipto²,Guha Prasanta Kumar³^ORCID,Banerji Pallab⁴,Pramanik Panchanan⁵^ORCID

Affiliation:

1. Department of Microelectronics & VLSI Technology, Maulana Abul Kalam Azad University of Technology, West Bengal, 741249, India

2. Department of Materials Science, University of Milano-Bicocca, Via R. Cozzi 55, Milano, I-20125, Italy

3. Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology Kharagpur, Kharagpur, 721302, India

4. Material Science Centre, Indian Institute of Technology Kharagpur, Kharagpur, 721302, India

5. Department of Chemistry and Nanotechnology, GLA University, Mathura, 281406, India

Abstract

A simple chemical reduction approach to doping β-FeSi2 with boron and its comprehensive characterization through experimental and density functional theorem (DFT) Analyses.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/RA/D3RA00497J

Reference62 articles.

1. Electronic and related properties of crystalline semiconducting iron disilicide

2. Photovoltaic characteristics of p-β-FeSi2(Al)/n-Si(100) heterojunction solar cells and the effects of interfacial engineering

3. Optical transition properties of β‐FeSi2film

4. Minority-carrier diffusion length, minority-carrier lifetime, and photoresponsivity of β-FeSi2 layers grown by molecular-beam epitaxy

5. Lifetime and diffusion length of photogenerated minority carriers in single-crystalline n-type β-FeSi2 bulk

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