Study of the n+GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance-Reference-Cited by-同舟云学术

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Study of the n+GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance

Published:2007-09-07 Issue:No. 35 Volume:46 Page:L842-L844
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Pei Yi,Shen Likun,Palacios Tomas,Fichtenbaum Nicholas A.,Mccarthy Lee S.,Keller Stacia,DenBaars Steven P.,Mishra Umesh K.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference9 articles.

1. Importance of source and drain resistance to the maximum f/sub T/ of millimeter-wave MODFETs

2. Influence of the Dynamic Access Resistance in the$g_m$and$f_T$Linearity of AlGaN/GaN HEMTs

3. Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature

4. Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs

5. Mass Transport Regrowth of GaN for Ohmic Contacts to AlGaN/GaN

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High Efficiency Over 70% at 3.6-GHz InAlN/GaN HEMT Fabricated by Gate Recess and Oxidation Process for Low-Voltage RF Applications;IEEE Transactions on Electron Devices;2023-01

2. High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure;Applied Physics Letters;2022-02-07

3. $\beta$ -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz;IEEE Electron Device Letters;2019-07

4. Proposal and Performance Analysis of Normally Off $ \hbox{n}^{++}$ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier;IEEE Transactions on Electron Devices;2010-09

5. Characterization of gate recessed GaN/AlGaN/GaN high electron mobility transistors fabricated using a SiCl4/SF6 dry etch recipe;Journal of Applied Physics;2010-07

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