Characterization of gate recessed GaN/AlGaN/GaN high electron mobility transistors fabricated using a SiCl4/SF6 dry etch recipe
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3457356
Reference27 articles.
1. IEEE 64th Device Research Conference;Wu Y. F.,2006
2. 12 W/mm AlGaN–GaN HFETs on Silicon Substrates
3. Study of Impact of Access Resistance on High-Frequency Performance of AlGaN/GaN HEMTs by Measurements at Low Temperatures
4. Study of the n+GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance
5. Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
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