Pattern Density Dependence of Thermal Deformation of Extreme Ultraviolet Mask and Its Impact on Full Field Lithography Performance
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference10 articles.
1. Architectural choices for EUV lithography masks: patterned absorbers and patterned reflectors
2. Soft X-Ray Reduction Lithography Using Multilayer Mirrors
3. Full field analysis of lithography performance for ArF immersion lithography
4. Thermomechanical modeling of the EUV reticle during exposure
5. Equivalent modeling technique for predicting the transient thermomechanical response of optical reticles during exposure
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Possible extreme ultraviolet mask thermal deformation during exposure;Journal of Micro/Nanopatterning, Materials, and Metrology;2021-08-31
2. Pattern dependent distortion and temperature variation in EUV mask;International Conference on Extreme Ultraviolet Lithography 2019;2019-09-26
3. Modeling of thermomechanical changes of extreme-ultraviolet mask and their dependence on absorber variation;Japanese Journal of Applied Physics;2018-05-22
4. Thermomechanical Changes of EUV Mask and Absorber Dependency;Extreme Ultraviolet (EUV) Lithography IX;2018-03-22
5. Numerical Simulation of Boundary Condition Dependence of Mask Pattern Placement Error by Finite Difference Method in Steady State;Journal of Advanced Mechanical Design, Systems, and Manufacturing;2013
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