Resist Reflow Modeling Including Surface Tension and Bulk Effect-Reference-Cited by-同舟云学术

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Resist Reflow Modeling Including Surface Tension and Bulk Effect

Published:2007-04-05 Issue:4A Volume:46 Page:1757-1762
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Ji-Eun,Park Jun-Min,Kim Kang Baek,Lee Sung-Muk,Park Seung-Wook,Oh Hye-Keun

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference3 articles.

1. Effect of Extreme Ultraviolet Light Scattering from the Rough Absorber and Buffer Side Wall

2. ArF Photoresist Parameter Optimization for Mask Error Enhancement Factor Reduction

3. Reflow modeling for elongated contact hole shape

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gate patterning strategies to reduce the gate shifting phenomenon for 14 nm fully depleted silicon-on-insulator technology;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-12-20

2. Position Shift Analysis in Resist Reflow Process for Sub-50 nm Contact Hole;Japanese Journal of Applied Physics;2009-09-24

3. Vertically tapered layers for optical applications fabricated using resist reflow;Journal of Micromechanics and Microengineering;2009-06-30

4. Position shift analysis in resist reflow process for sub-50-nm contact hole;Advances in Resist Materials and Processing Technology XXVI;2009-03-13

5. Patterning of 32 nm 1:1 Line and Space by Resist Reflow Process;Japanese Journal of Applied Physics;2008-11-14

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