New Statistical Evaluation Method for the Variation of Metal–Oxide–Semiconductor Field-Effect Transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference3 articles.
1. Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's
2. Study of 90-nm MOSFET Subthreshold Hump Characteristics Using Newly Developed MOSFET Array Test Structure
3. Matching properties of MOS transistors
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