Using Planarized p-GaN Layer to Reduce Electrostatic Discharged Damage in Nitride-Based Light-Emitting Diode
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference9 articles.
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3. InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode
4. High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates
5. Investigation on ESD-stressed GaN/InGaN-on-sapphire blue LEDs
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1. Influence of Silicon-Doping in n-AlGaN Layer on the Optical and Electrical Performance of Deep Ultraviolet Light-Emitting Diodes;Russian Journal of Physical Chemistry A;2019-12
2. Enhanced electrostatic discharge properties of nitride-based light-emitting diodes with inserting Si-delta-doped layers;Applied Physics Letters;2011-09-12
3. Performance on GaN-Based Light-Emitting Diodes with Different Substrate Tilt Angles;Materials Science Forum;2011-07
4. Negative-Voltage Electrostatic Discharge Characteristics of Blue Light-Emitting Diodes Using an Extended n-Electrode onto Plasma Treated p-GaN;Applied Physics Express;2011-06-22
5. A Novel Mechanism of Lysosomal Acid Sphingomyelinase Maturation;Journal of Biological Chemistry;2011-02
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