Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/2/i=3/a=034501/pdf
Reference11 articles.
1. InP Hot Electron Transistors with a Buried Metal Gate
2. Increase in Collector Current in Hot-Electron Transistors Controlled by Gate Bias
3. InP/InGaAs Hot Electron Transistors with Insulated Gate
4. Cutoff frequency characteristics of gate-controlled hot-electron transistors by Monte Carlo simulation
5. Over 300 GHz f/sub T/ and f/sub max/ InP/InGaAs double heterojunction bipolar transistors with a thin pseudomorphic base
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2. Study of resonant transport in InAs-based quantum hot electron transistors;AIP Advances;2020-07-01
3. High Open-Circuit Voltage Gain in Vertical InGaAs Channel Metal–Insulator–Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa;Japanese Journal of Applied Physics;2013-04-01
4. Reduction of Output Conductance in Vertical InGaAs Channel Metal–Insulator–Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region;Applied Physics Express;2012-01-25
5. Vertical InGaAs Channel Metal–Insulator–Semiconductor Field Effect Transistor with High Current Density;Japanese Journal of Applied Physics;2011-01-20
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