Study of resonant transport in InAs-based quantum hot electron transistors
Author:
Affiliation:
1. Institut d’Electronique du Sud, CNRS/Univ. Montpellier 2, Montpellier, France
2. Institut d’Electronique de Microélectronique et de Nanotechnologie, CNRS/Univ. Lille 1, Villeneuve d’Ascq, France
Funder
French Agence Nationale de la Recherche
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0011780
Reference15 articles.
1. InGaAs/InP DHBTs with 120-nm collector having simultaneously high f/sub /spl tau//, f/sub max//spl ges/450 GHz
2. 12.5 nm base pseudomorphic heterojunction bipolar transistors achieving fT=710GHz and fMAX=340GHz
3. Antimonide-based compound semiconductors for electronic devices: A review
4. Low-voltage InAsP/InAs HBT and metamorphic InAs BJT devices grown by molecular beam epitaxy
5. Fabrication of InAs/AlSb/GaSb heterojunction bipolar transistors on Al2O3 substrates by wafer bonding
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