Cutoff frequency characteristics of gate-controlled hot-electron transistors by Monte Carlo simulation-Reference-Cited by-同舟云学术

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Cutoff frequency characteristics of gate-controlled hot-electron transistors by Monte Carlo simulation

Published:2008-01 Issue:1 Volume:5 Page:70-73
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Igarashi Mitsuhiko,Furuya Kazuhito,Miyamoto Yasuyuki

Publisher

Wiley

Subject

Condensed Matter Physics

Reference19 articles.

1. L. F. Eastman, Int. Symp. GaAs and Related Compounds, Japan, 1981.

2. Vertical electron transistor (VET) in GaAs with a heterojunction (AlGaAs-GaAs) cathode

3. A high voltage-gain GaAs vertical field-effect transistor with an InGaAs/GaAs planar-doped barrier launcher

4. N. Yokoyama, K. Imamura, T. Ohshima, H. Nishi, S. Muto, K. Kondo, and S. Hiyamizu, Proc. IEDM, 19.7, 532 (1984).

5. Tunneling hot‐electron transfer amplifier: A hot‐electron GaAs device with current gain

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