Chemical Bonding States and Band Alignment of Ultrathin AlOxNy/Si Gate Stacks Grown by Metalorganic Chemical Vapor Deposition
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/2/i=7/a=075503/pdf
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1. Atomic layer deposited Al2O3 for gate dielectric and passivation layer of single-walled carbon nanotube transistors
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4. Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited Al2O3 on GaAs
5. Nondestructive depth profile of the chemical state of ultrathin Al2O3/Si interface
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