Atomic layer deposited Al2O3 for gate dielectric and passivation layer of single-walled carbon nanotube transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2724904
Reference17 articles.
1. Extraordinary Mobility in Semiconducting Carbon Nanotubes
2. Ballistic carbon nanotube field-effect transistors
3. Room-temperature transistor based on a single carbon nanotube
4. High-κ dielectrics for advanced carbon-nanotube transistors and logic gates
5. Carbon Nanotube Field-Effect Transistors with Integrated Ohmic Contacts and High-κ Gate Dielectrics
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