Formation of (100)-Textured Si Film Using an Excimer Laser on a Glass Substrate-Reference-Cited by-同舟云学术

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Formation of (100)-Textured Si Film Using an Excimer Laser on a Glass Substrate

Published:2003-02-15 Issue:Part 2, No. 2B Volume:42 Page:L135-L137
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Gosain Dharam Pal,Machida Akio,Fujino Toshio,Hitsuda Yukihisa,Nakano Kazushi,Sato Junichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=2B/a=L135/pdf

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Continuous-Wave Laser Lateral Crystallization of A-Si Thin Films on Polyimide Using a Heatsink Layer Embedded in the Buffer SiO2;Journal of Electronic Materials;2021-02-03

3. Extension of the {100}-Oriented Grain-Boundary Free Si Thin Film Grown by a Continuous-Wave Laser Lateral Crystallization;Thin Solid Films;2020-08

4. Unseeded Crystal Growth of (100)-Oriented Grain-Boundary-Free Si Thin-Film by a Single Scan of the CW-Laser Lateral Crystallization of a-Si on Insulator;Crystals;2020-05-17

5. Transition mechanism of the thin Si-films obtained by the CW laser lateral crystallization from the grain-boundary free highly {100} oriented crystal to the twinned {211} crystal depending on the laser power;Japanese Journal of Applied Physics;2019-02-22

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