Analysis and Classification of Degradation Phenomena in Polycrystalline-Silicon Thin Film Transistors Fabricated by a Low-Temperature Process Using Emission Light Microscopy-Reference-Cited by-同舟云学术

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Analysis and Classification of Degradation Phenomena in Polycrystalline-Silicon Thin Film Transistors Fabricated by a Low-Temperature Process Using Emission Light Microscopy

Published:2003-03-15 Issue:Part 1, No. 3 Volume:42 Page:1168-1172
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Inoue Satoshi,Kimura Mutsumi,Shimoda Tatsuya

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=3R/a=1168/pdf

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3. Cellular neural network formed by simplified processing elements composed of thin-film transistors;Neurocomputing;2017-07

4. Self-heating induced instability of oxide thin film transistors under dynamic stress;Applied Physics Letters;2016-01-11

5. Apoptotic self-organized electronic device using thin-film transistors for artificial neural networks with unsupervised learning functions;Japanese Journal of Applied Physics;2015-02-16

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