Band Gap Reduction in InAsN Alloys-Reference-Cited by-同舟云学术

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Band Gap Reduction in InAsN Alloys

Published:2003-02-15 Issue:Part 1, No. 2A Volume:42 Page:375-383
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shih Ding-Kang,Lin Hao-Hsiung,Sung Li-Wei,Chu Tso-Yu,Yang T.-R.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=2R/a=375/pdf

Cited by 65 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of the optoelectronic properties of InAsNBi/InAs quantum confined heterostructure in the presence of hydrostatic pressure for long wavelength infrared sensing;Optical and Quantum Electronics;2024-07-05

2. Atomic scale analysis of N dopants in InAs;Physical Review B;2023-07-06

3. Theoretical exploration of the optoelectronic properties of InAsNBi/InAs heterostructures for infrared applications: A multi-band k·p approach;Materials Science in Semiconductor Processing;2022-09

4. Optical characterization of Nitrided InAs/GaAs quantum dots grown by MBE;Journal of Materials Science: Materials in Electronics;2021-08-11

5. Strained-layer quantum well materials grown by MOCVD for diode laser application;Progress in Quantum Electronics;2021-01

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