Influence of Intentionally Strained Sapphire Substrate on GaN Epilayers-Reference-Cited by-同舟云学术

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Influence of Intentionally Strained Sapphire Substrate on GaN Epilayers

Published:2003-06-30 Issue:Part 1, No. 6B Volume:42 Page:3991-3994
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kim Jaekyun,Park Young Ju,Byun Dongjin,Jhin Junggeun,Kang Mingu,Koh Eui Kwan,Moon Youngboo,Min Suk-Ki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=6S/a=3991/pdf

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature behaviour of strain and defects in sapphire implanted with Si+ ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-08

2. Surface-treatment effects of a sapphire substrate by He[sup +]-, Ar[sup +]-, and Xe[sup +]-ion implantations for GaN epitaxial layers;Journal of the Society for Information Display;2008

3. The effects of strained sapphire (0001) substrate on the structural quality of GaN epilayer;physica status solidi (b);2004-10

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