The effects of strained sapphire (0001) substrate on the structural quality of GaN epilayer-Reference-Cited by-同舟云学术

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The effects of strained sapphire (0001) substrate on the structural quality of GaN epilayer

Published:2004-10 Issue:12 Volume:241 Page:2722-2725
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Cho Yong Suk,Kim Jeakyun,Park Young Ju,Na Hyunseok,Kim Hee Jin,Kim Hyun Jin,Yoon Euijoon,Kim Young Woon

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Amber InGaN-Based Light-Emitting Diodes Operable at High Ambient Temperatures

2. Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50°C with a Fundamental Transverse Mode

3. White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer

4. AlGaN/GaN HEMTs on (111) silicon substrates

5. GaN-based high electron-mobility transistors for microwave and RF control applications

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Unusual tilted growth and epitaxial relationship of NaCl B1-structured NiO and CrN on r-plane Al2O3;Journal of Applied Physics;2024-02-12

2. Study on the Influence of Sapphire Crystal Orientation on Its Chemical Mechanical Polishing;Applied Sciences;2020-11-13

3. Contrast Experiments in Dielectrophoresis Polishing (DEPP)/Chemical Mechanical Polishing (CMP) of Sapphire Substrate;Applied Sciences;2019-09-06

4. Microstructural properties and dislocation evolution on a GaN grown on patterned sapphire substrate: A transmission electron microscopy study;Journal of Applied Physics;2010-03-15

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