Novel Nitrogen Doped Ni Self-Alingned Silicide Process for Nanoscale Complementary Metal Oxide Semiconductor Technology-Reference-Cited by-同舟云学术

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Novel Nitrogen Doped Ni Self-Alingned Silicide Process for Nanoscale Complementary Metal Oxide Semiconductor Technology

Published:2005-04-21 Issue:4B Volume:44 Page:2142-2146
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Oh Soon-Young,Yun Jang-Gn,Huang Bin-Feng,Kim Yong-Jin,Ji Hee-Hwan,Kim Ui-Sik,Cha Han-Seob,Heo Sang-Bum,Lee Jeong-Gun,Wang Jin-Suk,Lee Hi-Deok

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Oxygen distribution in nickel silicide films analyzed by time-of-flight secondary ion mass spectrometry;Micron;2010-07

2. Influence of Incorporating Rare Earth Metals on the Schottky Barrier Height of Ni Silicide;Japanese Journal of Applied Physics;2010-05-20

3. Formation of Nickel Silicide from Direct-Liquid-Injection Chemical-Vapor-Deposited Nickel Nitride Films;Journal of The Electrochemical Society;2010

4. Anomalous Gate-Edge Leakage Current in nMOSFETs Caused by Encroached Growth of Nickel Silicide and Its Suppression by Confinement of Silicidation Region Using Advanced $\hbox{Si}^{+}$ Ion-Implantation Technique;IEEE Transactions on Electron Devices;2009-02

5. Study of Nickel Silicide Thermal Stability Using Silicon-on-Insulator Substrate for Nanoscale Complementary Metal Oxide Semiconductor Field-Effect Transisor Device;Japanese Journal of Applied Physics;2008-10-17

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