Anomalous Gate-Edge Leakage Current in nMOSFETs Caused by Encroached Growth of Nickel Silicide and Its Suppression by Confinement of Silicidation Region Using Advanced $\hbox{Si}^{+}$ Ion-Implantation Technique-Reference-Cited by-同舟云学术

Anomalous Gate-Edge Leakage Current in nMOSFETs Caused by Encroached Growth of Nickel Silicide and Its Suppression by Confinement of Silicidation Region Using Advanced $\hbox{Si}^{+}$ Ion-Implantation Technique

Published:2009-02 Issue:2 Volume:56 Page:206-213
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yamaguchi Tadashi,Kashihara Keiichiro,Okudaira Tomonori,Tsutsumi Toshiaki,Maekawa Kazuyoshi,Murata Naofumi,Tsuchimoto Junichi,Asai Koyu,Yoneda Masahiro

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4757346/04749281.pdf?arnumber=4749281

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1. Impact of thermal history of Si nanowire fabrication process on Ni silicidation rate;Japanese Journal of Applied Physics;2014-07-04

2. Schottky barrier height tuning of silicides on p-type Si (100) by aluminum implantation and pulsed excimer laser anneal;Journal of Applied Physics;2011-10

3. On Different Process Schemes for MOSFETs With a Controllable NiSi-Based Metallic Source/Drain;IEEE Transactions on Electron Devices;2011-07

4. Characterizations of NiSi2-Whisker Defects in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with <110> Channel on Si(100);Japanese Journal of Applied Physics;2010-12-20

5. X-ray metrology for advanced microelectronics;The European Physical Journal Applied Physics;2010-01-26