Effect of Plasma Pretreatment on Fixed Charge at the Silicon Nitride/Silicon Interface
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference10 articles.
1. Investigation of the properties of plasma-enhanced chemical vapor deposited silicon nitride and its effect on silicon surface passivation
2. Effect of ammonia plasma treatment on plasma deposited silicon nitride films/silicon interface characteristics
3. NH3Plasma Interface Modification for Silicon Surface Passivation at Very Low Temperature
4. Influence of an ammonia activation prior to the PECVD SiN deposition on the solar cell performance
5. Impact of illumination level and oxide parameters on Shockley–Read–Hall recombination at the Si‐SiO2interface
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1. Effect of dielectric claddings on the electro-optic behavior of silicon waveguides;Optics Letters;2016-03-10
2. Recombination and thin film properties of silicon nitride and amorphous silicon passivated c-Si following ammonia plasma exposure;Applied Physics Letters;2015-01-26
3. Interface properties of a-SiNx:H/Si to improve surface passivation;Solar Energy Materials and Solar Cells;2012-11
4. Examination of the properties of the interface of a-SiNx:H/Si in crystalline silicon solar cells and its effect on cell efficiency;MRS Proceedings;2012
5. Molecular dynamics studies of the bonding properties of amorphous silicon nitride coatings on crystalline silicon;Journal of Applied Physics;2011-12-15
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