Defect Reduction in Polycrystalline Silicon Thin Films at 150 °C
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference11 articles.
1. Utilization of plasma hydrogenation in stacked SRAM's with poly-Si PMOSFET's and bulk-Si NMOSFET's
2. Short time electron cyclotron resonance hydrogenation of polycrystalline silicon thin‐film transistor structures
3. Grain-boundary states and hydrogenation of fine-grained polycrystalline silicon films deposited by molecular beams
4. Energy distribution of trapping states at grain boundaries in polycrystalline silicon
5. Hydrogen Passivation of Polysilicon Thin-Film Transistors by Electron Cyclotron Resonance Plasma
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