(Invited) Polycrystalline Silicon Thin Film Transistors

Abstract

Technologies of polycrystalline silicon thin film transistors (poly-Si TFTs) are reviewed. Many important technologies have been developed in recent twenty years for establishing low processing temperature fabrication of poly-Si TFTs in order to use glass or plastic substrates. There have been rapid thermal annealing methods for formation of poly-Si films, defect passivation of poly-Si grain boundaries, and SiO2 formation. Structural and electrical properties of poly-Si films are also discussed. Characterization and evaluation methods are also reviewed. They are important for developing poly-Si TFTs processing. We discuss capability of TFT performance and possibility of application to electronic devices in future.