Growth and Characterization of High Qualitya-Plane InGaN/GaN Single Quantum Well Structure Grown by Multibuffer Layer Technique
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
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1. Spontaneous polarization and piezoelectric constants of III-V nitrides
2. Defect reduction in (112¯0) a-plane GaN by two-stage epitaxial lateral overgrowth
3. Quantum-confined Stark effects in the m-plane In0.15Ga0.85N∕GaN multiple quantum well blue light-emitting diode fabricated on low defect density freestanding GaN substrate
4. a-plane GaN grown on r-plane sapphire substrates by hydride vapor phase epitaxy
5. Impact of nucleation conditions on the structural and optical properties ofM-plane GaN(11̄00) grown on γ-LiAlO2
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