Cathodoluminescence Microcharacterization of Radiative Recombination Centers in Lifetime-Controlled Insulated Gate Bipolar Transistors-Reference-Cited by-同舟云学术

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Cathodoluminescence Microcharacterization of Radiative Recombination Centers in Lifetime-Controlled Insulated Gate Bipolar Transistors

Published:2010-04-20 Issue:4 Volume:49 Page:04DP15
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sugie Ryuichi,Mitani Takeshi,Yoshikawa Masanobu,Iwata Yoshiharu,Satoh Ryohei

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference23 articles.

1. Defect production and lifetime control in electron and γ‐irradiated silicon

2. Fast-switching insulated gate transistors

3. Localized lifetime control in insulated-gate transistors by proton implantation

4. Optimization of the tradeoff between switching speed of the internal diode and on-resistance in gold- and platinum-implanted power metal-oxide-semiconductor devices

5. Optimization of power diode characteristics by means of ion irradiation

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Origin of carrier lifetime degradation in floating-zone silicon during a high-temperature process for insulated gate bipolar transistor;Japanese Journal of Applied Physics;2020-11-01

2. Using Cross-Sectional Cathodoluminescence to Visualize Process-Induced Defects in GaN-Based High Electron Mobility Transistors;Journal of Electronic Materials;2020-04-12

3. Evaluation of residual defects created by plasma exposure of Si substrates using vertical and lateral pn junctions;Journal of Vacuum Science & Technology B;2020-01

4. Characterization of process-induced defects in SiC MOSFETs by cross-sectional cathodoluminescence;Japanese Journal of Applied Physics;2016-02-26

5. Residual defects in low-dose arsenic-implanted silicon after high-temperature annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2014-02

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