Gate Bias Instability under Light Irradiation in Polycrystalline Silicon Thin-Film Transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference7 articles.
1. Hot carrier effects in n-channel polycrystalline silicon thin-film transistors: a correlation between off-current and transconductance variations
2. Hot Carrier Effect in Low-Temperature poly-Si p-ch Thin-Film Transistors under Dynamic Stress
3. Mechanism of negative‐bias temperature instability in polycrystalline‐silicon thin film transistors
4. Bias temperature instability in hydrogenated thin-film transistors
5. Hot-electron and hole-emission effects in short n-channel MOSFET's
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1. Crystallization Using Biomineralized Nickel Nanodots of Amorphous Silicon Thick Films Deposited by Chemical Vapor Deposition, Sputtering and Electron Beam Evaporation;Japanese Journal of Applied Physics;2012-03-21
2. Crystallization Using Biomineralized Nickel Nanodots of Amorphous Silicon Thick Films Deposited by Chemical Vapor Deposition, Sputtering and Electron Beam Evaporation;Japanese Journal of Applied Physics;2012-03-01
3. Investigation on the characteristics of stress-induced hump in amorphous oxide thin film transistors;Applied Physics Letters;2011-07-25
4. Light Effect on Negative Bias-Induced Instability of HfInZnO Amorphous Oxide Thin-Film Transistor;IEEE Transactions on Electron Devices;2011-04
5. Temperature effect on negative bias-induced instability of HfInZnO amorphous oxide thin film transistor;Applied Physics Letters;2011-02-07
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