Investigation on the characteristics of stress-induced hump in amorphous oxide thin film transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3606538
Reference11 articles.
1. A New Poly-Si TFT Current-Mirror Pixel for Active Matrix Organic Light Emitting Diode
2. Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors
3. High stability of amorphous hafnium-indium-zinc-oxide thin film transistor
4. Effects of the thickness of the channel layer on the device performance of InGaZnO thin-film-transistors
5. The impact of gate dielectric materials on the light-induced bias instability in Hf–In–Zn–O thin film transistor
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1. Schottky Contact-induced Hump Phenomenon by Bias and Optical Stresses in Amorphous Oxide Thin Film Transistor;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2022-02-28
2. Suppression of Edge Effect Induced by Positive Gate Bias Stress in Low-Temperature Polycrystalline Silicon TFTs With Channel Width Extension Over Source/Drain Regions;IEEE Transactions on Electron Devices;2020-12
3. Study of Positive-Gate-Bias-Induced Hump Phenomenon in Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors;IEEE Transactions on Electron Devices;2020-04
4. Investigation on Hump Mechanism in Amorphous SiZnSnO Thin‐Film Transistor Depending on Si Concentration;physica status solidi (a);2020-03-13
5. Formation of Hump Effect Due to Top-Gate Bias Stress in Organic Thin-Film Transistors;IEEE Electron Device Letters;2019-12
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