Effects of the thickness of the channel layer on the device performance of InGaZnO thin-film-transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
Reference15 articles.
1. ZnO-based transparent thin-film transistors
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3. Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
4. High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel
5. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
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