Threading Dislocations in InGaAs CaP Layers with InGaAs Graded Layers Grown on Si Substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference21 articles.
1. Growth by molecular beam epitaxy of thick films of InxGa1-xAs (x ∼ 0.53) on Si(100) substrates
2. Alloy clustering and defect structure in the molecular beam epitaxy of In0.53Ga0.47As on silicon
3. Annealing effects on lattice-strain–relaxed In0.5Al0.5As/In0.5Ga0.5As heterostructures grown on GaAs substrates
4. Monolithic integration of InP-based transistors on Si substrates using MBE
5. Reduction of threading dislocation density in InP‐on‐Si heteroepitaxy with strained short‐period superlattices
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Heterogeneous integration of InAs/GaSb tunnel diode structure on silicon using 200 nm GaAsSb dislocation filtering buffer;AIP Advances;2018-10
2. Simulation study of 14-nm-gate III-V trigate field effect transistor devices with In1−xGaxAs channel capping layer;AIP Advances;2015-06
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