Effect of an Ultrathin SiN Cap Layer on the Bias Temperature Instability in Metal–Oxide–Semiconductor Field-Effect Transistors with HfSiON Gate Stacks-Reference-Cited by-同舟云学术

Effect of an Ultrathin SiN Cap Layer on the Bias Temperature Instability in Metal–Oxide–Semiconductor Field-Effect Transistors with HfSiON Gate Stacks

Published:2010-12-20 Issue:12 Volume:49 Page:121503
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Zhu Shiyang,Takeue Shinya,Nakajima Anri

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference12 articles.

1. Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions

2. Performance and Reliability Improvement of HfSiON Field-Effect Transistor with Low Hafnium Concentration Cap Layer Formed by Metal Organic Chemical Vapor Deposition with Diethylsilane

3. Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics

4. Review on high-k dielectrics reliability issues

5. Electron detrapping characteristics in positive bias temperature stressed n-channel metal-oxide-semiconductor field-effect transistors with ultrathin HfSiON gate dielectrics

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1. Strain engineered high reflectivity DBRs in the deep UV;SPIE Proceedings;2016-02-26

2. Oxynitridization Dependent Interface Control and Band Alignment of AlON/SiON/Si Gate Stacks Grown by Metalorganic Chemical Vapor Deposition;Science of Advanced Materials;2013-06-01