Performance and Reliability Improvement of HfSiON Field-Effect Transistor with Low Hafnium Concentration Cap Layer Formed by Metal Organic Chemical Vapor Deposition with Diethylsilane-Reference-Cited by-同舟云学术

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Performance and Reliability Improvement of HfSiON Field-Effect Transistor with Low Hafnium Concentration Cap Layer Formed by Metal Organic Chemical Vapor Deposition with Diethylsilane

Published:2008-02-15 Issue:2 Volume:47 Page:879-884
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sato Motoyuki,Nakasaki Yasushi,Watanabe Koji,Aoyama Tomonori,Hasegawa Eiji,Koyama Masato,Sekine Katsuyuki,Eguchi Kazuhiro,Saito Masaki,Tsunashima Yoshitaka

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference1 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved Degradation and Recovery Characteristics of SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Negative-Bias Temperature Stress;Japanese Journal of Applied Physics;2013-04-01

2. Effect of an Ultrathin SiN Cap Layer on the Bias Temperature Instability in Metal–Oxide–Semiconductor Field-Effect Transistors with HfSiON Gate Stacks;Japanese Journal of Applied Physics;2010-12-20

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