Study of Ga Adsorption Structure on Ni/Si(100) Surface by Scanning Tunneling Microscopy-Reference-Cited by-同舟云学术

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Study of Ga Adsorption Structure on Ni/Si(100) Surface by Scanning Tunneling Microscopy

Published:2010-08-20 Issue:8 Volume:49 Page:08LB03
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hara Shinsuke,Fuse Kazuhiro,Suzuki Toru,Yagishita Kazuki,Hirata Yoshiki,Irokawa Katsumi,Miki Hirofumi,Kawazu Akira,Fujishiro Hiroki I.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference21 articles.

1. Surface structures and growth mechanism of Ga ON Si(100) determined by LEED and Auger electron spectroscopy

2. Structure of a Si(100)2×2-Ga surface

3. Scanning tunneling microscopy on Ga/Si(100)

4. Indium and gallium on Si(001): A closer look at the parallel dimer structure

5. Structure of low-coverage phases of Al, Ga, and In on Si(100)

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dimer-vacancy defects on Si(1 0 0): The role of nickel impurity;Applied Surface Science;2020-03

2. Initial surface silicidation on Ni(110);Surface Science;2017-05

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