Initial surface silicidation on Ni(110)-Reference-Cited by-同舟云学术

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Initial surface silicidation on Ni(110)

Published:2017-05 Issue: Volume:659 Page:1-4
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Fukuda T.,Kishida I.,Umezawa K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference22 articles.

1. Silicide Technology for Integrated Curcuits,2004

2. Fully Silicided Metal Gates for High-Performance CMOS Technology: A Review

3. L.C. Miglio (Ed.), Silicides: Fundamentals and Applications: Proc. 16th Course of the International School of Solid State Physics, World Scientific, Singapore, 2000.

4. Role of the early stages of Ni-Si interaction on the structural properties of the reaction products

5. Phase transitions and epitaxial Ni3Si formation on Ni(100) after high dose silicon ion implantation

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. First-principles Study of Si-embedded Ni(100) Surfaces;e-Journal of Surface Science and Nanotechnology;2021-11-11

2. Formation of two-dimensional silicide on Ni(100) surface;Japanese Journal of Applied Physics;2020-05-18

3. First-Principles Study of Silicon-Embedded Ni(110);e-Journal of Surface Science and Nanotechnology;2017

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