Scanning tunneling microscopy on Ga/Si(100)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.8756/fulltext
Reference23 articles.
1. Structural determination of Si(100)2×2-Al by tensor LEED
2. Structure of a Si(100)2×2-Ga surface
3. Structural study of the Si(100)2×2-In surface
4. Angle-resolved photoemission studies of clean and adsorbed Si(001) surfaces: 2 × 1, c(4 × 2), 2 × 1-Na and 2 × 2-Ga
5. Surface electronic structure of single-domain Si( 001) 2 × 2-Al: an angle-resolved photoelectron spectroscopy study using synchrotron radiation
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2. Scanning tunneling microscopy study on the oxidation and annealing of Ga/Si(111);Japanese Journal of Applied Physics;2017-03-27
3. Effects of Ga-induced reconstructed surfaces and atomic steps on the morphology of GaSb islands on Si(100);Applied Surface Science;2015-10
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