DC and RF Performance Improvement of 70 nm Quantum Well Field Effect Transistor by Narrowing Source–Drain Spacing Technology-Reference-Cited by-同舟云学术

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DC and RF Performance Improvement of 70 nm Quantum Well Field Effect Transistor by Narrowing Source–Drain Spacing Technology

Published:2010-01-06 Issue:1 Volume:49 Page:010212
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kuo Chien-I,Hsu Heng-Tung,Chang Edward Yi,Miyamoto Yasuyuki,Wu Chien-Ying,Chen Yu-Lin,Hsiao Yu-Lin

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference7 articles.

1. Enhancement-Mode Metamorphic HEMT on GaAs Substrate With 2 S/mm $g_{m}$ and 490 GHz $f_{T}$

2. InAs Channel-Based Quantum Well Transistors for High-Speed and Low-Voltage Digital Applications

3. 50-nm T-Gate InAlAs/InGaAs Metamorphic HEMTs With Low Noise and High $f_{T}$ Characteristics

4. Self-aligned T-gate InP HEMT realisation through double delta doping and a non-annealed ohmic process

5. A Capless$hboxInP/hboxIn_0.52hboxAl_0.48hboxAs/hboxIn_0.53hboxGa_0.47hboxAs$p-HEMT Having a Self-Aligned Gate Structure

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature dependency and reliability of through substrate via InAlN/GaN high electron mobility transistors as determined using low frequency noise measurement;Japanese Journal of Applied Physics;2016-03-30

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