Point Defects Induced by Physical Sputtering in Wurtzite-Type GaN Crystal
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference20 articles.
1. High power ultraviolet light emitting diodes based on GaN∕AlGaN quantum wells produced by molecular beam epitaxy
2. High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
3. Electron cyclotron resonance etching characteristics of GaN in SiCl4/Ar
4. The effects of nitrogen plasma on reactive-ion etching induced damage in GaN
5. Plasma-etching-enhanced deep centers in n-GaN grown by metalorganic chemical-vapor deposition
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1. Multiscale modeling of plasma–surface interaction—General picture and a case study of Si and SiO2 etching by fluorocarbon-based plasmas;Applied Physics Reviews;2021-12
2. Residual Strain in the AlN Layers Deposited by Reactive-Gas Pulsed Sputtering Deposition;Transactions on Electrical and Electronic Materials;2020-06-25
3. Construction, characterization, and growth mechanism of high-density jellyfish-like GaN/SiOxNy nanomaterials on p-Si substrate by Au-assisted chemical vapor deposition approach;CrystEngComm;2019
4. Morphologies and optical and electrical properties of InGaN/GaN micro-square array light-emitting diode chips;Applied Optics;2018-04-04
5. The fundamental surface science of wurtzite gallium nitride;Surface Science Reports;2017-09
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