Plasma-etching-enhanced deep centers in n-GaN grown by metalorganic chemical-vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1560562
Reference15 articles.
1. Cl[sub 2]/Ar High-Density-Plasma Damage in GaN Schottky Diodes
2. Schottky diode measurements of dry etch damage inn- andp-type GaN
3. Plasma-induced damage study for n-GaN using inductively coupled plasma reactive ion etching
4. Dislocation-related electron capture behaviour of traps in n-type GaN
5. Characterization of near-surface traps in semiconductors: GaN
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