Light Extraction Enhancement of GaN-Based Light-Emitting Diodes Using Volcano-Shaped Patterned Sapphire Substrates-Reference-Cited by-同舟云学术

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Light Extraction Enhancement of GaN-Based Light-Emitting Diodes Using Volcano-Shaped Patterned Sapphire Substrates

Published:2010-04-20 Issue:4 Volume:49 Page:042102
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kim Jae Bum,Kim Sang-Mook,Kim Young Woo,Kang Sung-Ku,Jeon Seong-Ran,Hwang Nam,Choi Yeon-Jo,Chung Chang Sub

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference14 articles.

1. Monte Carlo simulation of light-emitting diode light-extraction characteristics

2. Analysis of light-emitting diodes by Monte Carlo photon simulation

3. Monte Carlo analysis of the spectral photon emission and extraction efficiency of organic light-emitting devices

4. Highly reliable nitride-based LEDs with SPS+ITO upper contacts

5. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening

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1. Enhanced Performance of InGaN Light-Emitting Diodes via High-Quality GaN and Embedded Air Voids Grown on Hexagonal 3D Serpentine Mask Sapphire Substrates;ACS Photonics;2023-09-11

2. Research on the Performance Improvement of GaN-Based Ultraviolet Light-Emitting Diode Chips with Magnetron-Sputtered AlN Nucleation Layers;Integrated Ferroelectrics;2023-09-02

3. Surface lattice resonances for beaming and outcoupling green μ LEDs emission;Nanophotonics;2023-08-04

4. Application of patterned sapphire substrate for III-nitride light-emitting diodes;Nanoscale;2022

5. Comparative Research of GaN Growth Mechanisms on Patterned Sapphire Substrates with Sputtered AlON Nucleation Layers;Materials;2020-09-05

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