Line Edge Roughness Reduction Using Resist Reflow Process for 22 nm Node Extreme Ultraviolet Lithography
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference22 articles.
1. 45nm and 32nm half-pitch patterning with 193nm dry lithography and double patterning
2. Study of the fundamental contributions to line edge roughness in a 193 nm, top surface imaging system
3. Molecular weight effect on line-edge roughness
4. Mesoscale kinetic Monte Carlo simulations of molecular resists: the effect of PAG homogeneity on resolution, LER, and sensitivity
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Line width roughness reduction strategies for patterns exposed via electron beam lithography;SPIE Proceedings;2014-03-28
2. HBr/O2 plasma treatment followed by a bake for photoresist linewidth roughness smoothing;Journal of Applied Physics;2014-02-21
3. Smoothing mechanisms involved in thermal treatment for linewidth roughness reduction of 193-nm photoresist patterns;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-11
4. Using Directed Self Assembly of Block Copolymer Nanostructures to Modulate Nanoscale Surface Roughness: Towards a Novel Lithographic Process;Advanced Functional Materials;2012-08-22
5. Plasma-polymer interactions: A review of progress in understanding polymer resist mask durability during plasma etching for nanoscale fabrication;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-01
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