Quantitative Examination of Mobility Lowering Associated with Ultrathin Gate Oxides in Silicon Metal-Oxide-Semiconductor Inversion Layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effectiveness of Surface Potential Fluctuation for Representing Inversion-Layer Mobility Limited by Coulomb Scattering in MOFETs;IEEE Electron Device Letters;2015-11
2. EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature;IEEE Transactions on Electron Devices;2012-02
3. Noncontact metrology for inversion charge carrier mobility by corona charge and photovoltage measurements on blank wafers with a gate dielectric;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-01
4. Contactless mobility measurements of inversion charge carriers on silicon substrates with SiO2 and HfO2 gate dielectrics;Applied Physics Letters;2010-03-22
5. Increase in the electron mobility in the inversion channel of a Si-MOS transistor in the case of ion polarization of the gate oxide;Semiconductors;2007-03
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