Contactless mobility measurements of inversion charge carriers on silicon substrates with SiO2 and HfO2 gate dielectrics
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3373920
Reference12 articles.
1. High dielectric constant oxides
2. High-K dielectrics for the gate stack
3. Proceedings of the Symposium on VLSI Technology;Ortolland C.,2009
4. The Present Status and Recent Advancements in Corona-Kelvin Non-Contact Electrical Metrology of Dielectrics for IC-Manufacturing
5. Proceedings of the Advanced Semiconductor Manufacturing IEEE/SEMI Conference and Workshop;Cubaynes F.,2002
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