Phosphorus gettering of impurities at low-temperature annealing for enhancing the performance of p-type PERC-Reference-Cited by-同舟云学术

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Phosphorus gettering of impurities at low-temperature annealing for enhancing the performance of p-type PERC

Published:2019 Issue: Volume: Page:
ISSN:0094-243X
Container-title:15th International Conference on Concentrator Photovoltaic Systems (CPV-15)
language:
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Author:

Joonwichien Supawan,Kida Yasuhiro,Moriya Masaaki,Utsunomiya Satoshi,Shirasawa Katsuhiko,Takato Hidetaka

Publisher

AIP Publishing

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5123854

Reference32 articles.

1. Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon

2. Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon

3. Latent complexes of interstitial boron and oxygen dimers as a reason for degradation of silicon-based solar cells

4. Gold solubility in silicon and gettering by phosphorus

5. Gettering in silicon

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gettering in silicon photovoltaics: A review;Solar Energy Materials and Solar Cells;2022-01

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