Relationship between Ozone Oxidation and Stress Evolution on an H-Terminated Si Surface-Reference-Cited by-同舟云学术

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Relationship between Ozone Oxidation and Stress Evolution on an H-Terminated Si Surface

Published:2004-01-13 Issue:1 Volume:43 Page:281-286
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kurokawa Akira,Narushima Tetsuya,Nakamura Ken,Nonaka Hidehiko,Ichimura Shingo,Itakura Akiko N.,Kitajima Masahiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/43/i=1R/a=281/pdf

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Use of microcrystallinity depth profiling in an actual tandem silicon solar cell by polishing to achieve high conversion efficiency;Japanese Journal of Applied Physics;2015-04-01

2. Evidence of GeO volatilization and its effect on the characteristics of HfO2grown on a Ge substrate;Chinese Physics B;2013-03

3. Physical properties and electrical characteristics of H2O-based and O3-based HfO2 films deposited by ALD;Microelectronics Reliability;2012-06

4. Silicon oxidation by ozone;Journal of Physics: Condensed Matter;2009-03-11

5. Radical-mediated adsorption: Ozone oxidation of passivated silicon;Surface Science;2008-07

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