Silicon oxidation by ozone
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/21/i=18/a=183001/pdf
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1. Photoelectron spectroscopy studies of SiO2/Si interfaces
2. The interaction of molecular and atomic oxygen with Si(100) and Si(111)
3. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
4. Development of a continuous generation/supply system of highly concentrated ozone gas for low-temperature oxidation process
5. Rapid Oxidation of Silicon Using UV-Light Irradiation in Low-Pressure, Highly Concentrated Ozone Gas below 300 °C
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