Doping-Induced Contrast in the Refractive Index for GaInN/GaN Structures at Telecommunication Wavelengths-Reference-Cited by-同舟云学术

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Doping-Induced Contrast in the Refractive Index for GaInN/GaN Structures at Telecommunication Wavelengths

Published:2009-10-23 Issue:11 Volume:2 Page:111001
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Cywiński Grzegorz,Kudrawiec Robert,Rzodkiewicz Witold,Kryśko Marcin,Litwin-Staszewska Elżbieta,Łucznik Bolesław,Misiewicz Jan,Skierbiszewski Czesław

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/2/i=11/a=111001/pdf

Reference27 articles.

1. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates

2. Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy

3. Feasibility Study on Ultrafast Nonlinear Optical Properties of 1.55-µ m Intersubband Transition in AlGaN/GaN Quantum Wells

4. Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers

5. Intersubband transition in (GaN)m/(AlN)n superlattices in the wavelength range from 1.08 to 1.61 μm

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanostars in Highly Si-Doped GaN;Crystal Growth & Design;2023-06-11

2. Revealing inhomogeneous Si incorporation into GaN at the nanometer scale by electrochemical etching;Nanoscale;2020

3. Transparency of Semi-Insulating, n-Type, and p-Type Ammonothermal GaN Substrates in the Near-Infrared, Mid-Infrared, and THz Spectral Range;Crystals;2017-06-25

4. Theoretical study of ultraviolet ZnO/Zn0.8 Mg0.2 O laser diodes on GaN or Al2 O3 substrates: Toward electrically pumped devices;physica status solidi (a);2014-04-28

5. High quality factor whispering gallery modes from self-assembled hexagonal GaN rods grown by metal-organic vapor phase epitaxy;Optics Express;2013-01-29

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