AtmosphericIn situArsenic-Doped SiGe Selective Epitaxial Growth for Raised-Extension N-type Metal–Oxide–Semiconductor Field-Effect Transistor-Reference-Cited by-同舟云学术

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AtmosphericIn situArsenic-Doped SiGe Selective Epitaxial Growth for Raised-Extension N-type Metal–Oxide–Semiconductor Field-Effect Transistor

Published:2007-04-24 Issue:4B Volume:46 Page:1916-1920
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ikuta Tetsuya,Miyanami Yuki,Fujita Shigeru,Iwamoto Hayato,Kadomura Shingo,Shimura Takayoshi,Watanabe Heiji,Yasutake Kiyoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference17 articles.

1. Arsenic surface segregation during in situ doped silicon and Si1−xGex molecular beam epitaxy

2. Heavy arsenic doping of silicon by molecular beam epitaxy

3. Arsenic surface segregation and incorporation in Si and Si 1 − x Ge x during gas source molecular beam epitaxy

4. The development of RAS and RHEED as in situ probes to monitor dopant segregation in GS-MBE on Si (001)

5. Arsenic diffusion in Si and strained SixGe1−x alloys at 1000 °C

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1. Comparative Study of Oxygen- and Carbon-Related Defects in Electron Irradiated Cz–Si Doped with Isovalent Impurities;Applied Sciences;2022-08-15

2. Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon–Germanium Multilayers Structures for Vertical Transistors Application;Nanoscale Research Letters;2020-12

3. Strain tuning of native defect populations: The case of Cu2ZnSn(S,Se)4;APL Materials;2014-01

4. Strain-Engineered Modulation on the Electronic Properties of Phosphorous-Doped ZnO;ChemPhysChem;2013-11-08

5. Bidirectional Two-Terminal Switching Device with Metal–Semiconductor–Semiconductor Structures for 4F2Spin-Transfer-Torque Magnetoresistance Random Access Memory Cell;Japanese Journal of Applied Physics;2013-07-01

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