Heavy arsenic doping of silicon by molecular beam epitaxy-Reference-Cited by-同舟云学术

Heavy arsenic doping of silicon by molecular beam epitaxy

Published:2003-04 Issue:1-4 Volume:251 Page:651-656
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Liu Xian,Tang Qiang,Kamins Theodore I.,Harris James S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. International Technology Roadmap for Semiconductors, Front End Processes, Semiconductor Industry Association, 2001; available online at http://public.itrs.net/Files/2001ITRS/Home.htm

2. Control of n‐Type Dopant Transitions in Low‐Temperature Silicon Epitaxy

3. Chemical vapor deposition of undoped and in-situ boron- and arsenic-doped epitaxial and polycrystalline silicon films grown using silane at reduced pressure

4. Arsenic incorporation during Si(001):As gas-source molecular-beam epitaxy from Si2H6 and AsH3: Effects on film-growth kinetics

5. Site exchange mechanism in surfactant-mediated epitaxial growth

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