Arsenic diffusion in Si and strained SixGe1−x alloys at 1000 °C
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference9 articles.
1. Diffusion of Sb in Strained and Relaxed Si and SiGe
2. Boron and phosphorus diffusion in strained and relaxed Si and SiGe
3. Germanium-concentration dependence of arsenic diffusion in silicon germanium alloys
4. Concentration Profiles of Diffused Dopants in Silicon;Fair,1981
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3. Finite Cylinders of Si1 −xGexAlloy Under the Double-Punch Test and Effect on Three Valence-Bands;Mechanics of Advanced Materials and Structures;2009-06-19
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